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Infineon launches CoolSiC ™ MOSFET 2000 V, providing higher power density without affecting system reliability

Article Source：Infineon | Author：Kinri Energy | Issuing Time：2024.03.16
The CoolSiC™ 2000 V 12 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability thanks to the .XT interconnection technology in a 2000 V optimized package, enabling top efficiency in applications such as string inverters, solar power optimizer, EV charging and energy storage systems.



Summary of Features

● VDSS = 2000 V for high DC-link systems up to 1500 VDC
● Very low switching losses
● Innovative HCC package
● 14 mm pin to pin creepage
● 5.4 mm clearance distances
● Benchmark gate threshold voltage, VGS(th) = 4.5 V
● Robust body diode for hard commutation
● XT interconnection technology for best-in-class thermal performance
● Improved humidity robustness 

Benefits

● High power density
● Excellent reliability
● Highest efficiency
● Ease of design

Applications

● Energy Storage Systems
● EV charging
● Photovoltaic

Diagrams



CoolSiC ™ The MOSFET 2000 V product series is suitable for high DC bus systems up to 1500 VDC. Compared to 1700 V SiC MOSFETs, these devices can also provide higher margin for overvoltage in 1500 VDC systems. CoolSiC ™ The reference gate threshold voltage of MOSFET is 4.5 V, and it is equipped with a sturdy body diode to achieve hard commutation. With XT connection technology, these devices can provide first-class heat dissipation performance and high moisture resistance.

Except for 2000 V CoolSiC ™ In addition to MOSFET, Infineon will soon launch a matching CoolSiC ™ Diodes: The first 2000V diode product portfolio to be launched in the third quarter of 2024 will be TO-247PLUS 4-pin packaging, followed by the 2000V CoolSiC packaged in TO-247-2 packaging in the fourth quarter of 2024 ™ Diode product portfolio. These diodes are very suitable for solar energy applications. In addition, Infineon also offers a matching gate driver product portfolio.

Supply situation

CoolSiC ™ The MOSFET 2000 V product series has now been launched. In addition, Infineon also provides the corresponding evaluation board EVAL-COOLSIC ™- 2KVHCC. Developers can use this evaluation board as a precise universal testing platform to evaluate all CoolSiC through dual pulse or continuous PWM operation ™ MOSFET and 2000 V diode, as well as EiceDRIVER ™ Compact single channel isolated gate driver 1ED31xx product series.
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