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Infineon Technologies Solid State Isolators

Article Source：mouser | Author：mouser | Issuing Time：2024.05.17
Infineon Technologies Solid State Isolators (SSI) provide galvanically isolated gate drives for various MOSFET and IGBT switches in SSR applications. These devices enable the creation of custom solid-state relays capable of controlling loads over 1000V and 100A. The CT-based isolators enable energy transfer across the isolation barrier and can drive large MOSFETs or IGBTs without the added circuitry of a power supply on the isolated side. The innovative protection features enable the design of reliable and robust Solid State Relays.

The SSIs provide powerful energy transmission over a galvanic isolation barrier to drive the gates of MOS-controlled power transistors, such as CoolMOS™, OptiMOS™, CoolSiC™, or TRENCHSTOP™ IGBT. The output side of the solid-state isolator family does not require a dedicated voltage supply to drive the power transistor's gate. The output side offers advanced control functions such as fast turn-on, fast turn-off, overcurrent protection, and over-temperature protection to easily/safely build up solid-state relays for various applications. This family includes iSSI30R12H, which is tailored for CoolMOS™ S7 T-Sense power MOSFETs offering an integrated temperature sensor. Other parts of the family are for use with external PTC resistors.


ISSI series solid-state isolators

Precise protection functions are offered for building cost-effective systems. The input side of the isolator is 3.3V compatible and operates with a supply current of 16mA (typical). The iSSI20R02H, iSSI20R03H, and iSSI20R11H variants come in a DSO-8-66 package while iSSI30R11H and iSSI30R12H come in a DSO-16-33 package.

FEATURES

●  Solid-state isolators using Infineon's coreless-transformer technology
●  No isolated gate bias supply is required for gate driving
●  Perfect match for CoolMOS, OptiMOS, and TRENCHSTOP IGBTs
●  Low power, large input voltage range from 2.6V to 3.5V (internally clamped)
●  High-impedance, CMOS input (buffered variants)
●  Up to 18V output voltage, no series or parallel configuration required for powerful gate driving
●  High-output peak currents
◇185µA (direct drive variants)
◇400mA (buffered variants)
●  Fast turn-on/-off for safe switches' SOA operation
●  Up to 5.7kVRMS galvanic isolation
●  Temperature sensor and current sensor protection inputs
●  Latch-off in case of a failure event (overcurrent or over-temperature)
●  Dynamic Miller clamping protection
●  Wide-body package with high creepage and clearance for UL 1577 (planned) and reinforced isolation according to IEC 60747-17 (planned)
●  Minimizes the need for heatsinks
●  Eliminates spurious contact turn on

APPLICATIONS

●  Solid-state relay AC and DC applications
●  Electromechanical relay replacements
●  Programmable logic control, industrial automation, and controls
●  Smart building and home automation systems (thermostat, lighting, heating control)
●  Instrumentation equipment

SPECIFICATIONS
●  ±1200V maximum input-to-output offset voltage
●  -10V to 4.25V maximum input supply voltage
●  -10V to 15V maximum input logic voltage
●  0mA to 120mA maximum input supply current
●  200mW maximum power dissipation input part
●  4.5mW maximum power dissipation output part
●  2kHz maximum switching frequency
●  200V/ns maximum common-mode transient immunity
● -40°C to +125°C ambient temperature range
● -40°C to +150°C junction temperature range
● ESD robustness
◇2kV minimum Human Body Model (HBM)
◇TC 1000 Charged Device Model (CDM) according to ANSI/ESDA/JEDEC-JS-002-2014 (TC = highest test condition passed according to AEC-Q100-011 Rev D)
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