EPC has launched the 100V, 1 mOhm EPC2361. This is claimed to be the lowest on-resistance GaN FET on the market offering double the power density compared to EPC’s prior-generation products.

The EPC2361 has a typical RDS(on) of 1 mOhm in a thermally enhanced QFN package with exposed top and tiny, 3 mm x 5 mm, footprint. The maximum RDS(on) x Area of the EPC2361 is 15 mΩ*mm² – over five times smaller than comparable 100V silicon MOSFETs, according to EPC.

With its ultra-low on-resistance, the EPC2361 enables higher power density and efficiency in power conversion systems, leading to reduced energy consumption and heat dissipation. This breakthrough is particularly significant for applications such as high-power PSU AC-DC synchronous rectification, high frequency DC-DC conversion for data centers, motor drives for eMobility, robotics, drones, and solar MPPTs.

“Our new 1 mΩ GaN FET continues to push the boundaries of what is possible with GaN technology, empowering our customers to create more efficient, compact, and reliable power electronics systems,” comments Alex Lidow, EPC CEO and co-founder.

EPC has also produced the EPC90156 development board – a 50.8 mm x 50.8 mm half bridge featuring the EPC2361 GaN FET.